KEC khb9d0n50p1 f1 f2 free download

File name khb9d0n50p1_f1_f2.pdf

SEMICONDUCTOR KHB9D0N50P1/F1/F2 N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V, ID= 9A Drain-Source ON Resistance : RDS(ON)=0.8 @VGS =10V Qg(typ.) =34.6nC MAXIMUM RATING (Tc=25 ) RATING CHARACTERISTIC SYMBOL KHB9D0N50F1 UNIT KHB9D0N50P1 KHB9D0N50F2 KHB9D0N50F1 Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS 30 V @TC=25 9 9* ID Drain Current @TC=100 5.4 5.4* A Pulsed (Note1) IDP 36 36* Single Pulsed Avalanche Energy EAS 360 mJ (Note 2) Repetitive Avalanche Energy EAR 13.5 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 4.5 V/ns (Note 3) Drain Power Tc=25 135 44 W PD Dissipation Derate above25 1.07 0.35 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics KHB9D0N50F2 Thermal Resistance, Junction-to-Case RthJC 0.93 2.86 /W Thermal Resistance, Case-to-Sink RthCS 0.5 - /W Thermal Resistance, Junction-to- RthJA 62.5 62.5 /W Ambient * : Drain current limited by maximum junction temperature. PIN CONNECTION 2007. 5. 10 Revision No : 0 1/7